? semiconductor components industries, llc, 2003 november, 2003 ? rev. 2 1 publication order number: NTHD5903/d NTHD5903 power mosfet dual p-channel chipfet 2.2 a, 20 v features ? low r ds(on) for higher efficiency ? logic level gate drive ? miniature chipfet surface mount package saves board space applications ? power management in portable and battery?powered products; i.e., cellular and cordless telephones and pcmcia cards maximum ratings (t a = 25 c unless otherwise noted) rating symbol 5 secs steady state unit drain?source voltage v ds ?20 v gate?source voltage v gs 12 v continuous drain current (t j = 150 c) (note 1) t a = 25 c t a = 85 c i d 3.0 2.2 2.2 1.6 a pulsed drain current i dm 10 a continuous source current (diode conduction) (note 1) i s ?3.0 ?2.2 a maximum power dissipation (note 1) t a = 25 c t a = 85 c p d 2.1 1.1 1.1 0.6 w operating junction and storage temperature range t j , t stg ?55 to +150 c 1. surface mounted on 1 x 1 fr4 board. g 1 g 2 s 1 d 1 s 2 d 2 p?channel mosfet p?channel mosfet device package shipping 2 ordering information NTHD5903t1 chipfet 3000/tape & reel chipfet case 1206a style 2 1 2 3 4 5 6 7 8 pin connections marking diagram a7 a7 = specific device code 1 2 3 4 s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 8 7 6 5 http://onsemi.com 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. ?20 v 130 m @ ?4.5 v i d max v (br)dss r ds(on) typ 2.2 a 215 m @ ?2.5 v
NTHD5903 http://onsemi.com 2 thermal characteristics characteristic symbol typ max unit maximum junction?to?ambient (note 2) t 5 sec steady state r thja 50 90 60 110 c/w maximum junction?to?foot (drain) steady state r thjf 30 40 c/w electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ?250 a ?0.6 ? ? v gate?body leakage i gss v ds = 0 v, v gs = 12 v ? ? 100 na zero gate voltage drain current i dss v ds = ?16 v, v gs = 0 v ? ? ?1.0 a v ds = ?16 v, v gs = 0 v, t j = 85 c ? ? ?5.0 on?state drain current (note 3) i d(on) v ds ?5.0 v, v gs = ?4.5 v ?10 ? ? a drain?source on?state resistance (note 3) r ds(on) v gs = ?4.5 v, i d = ?2.2 a ? 0.130 0.155 () v gs = ?3.6 v, i d = ?2.0 a ? 0.150 0.180 v gs = ?2.5 v, i d = ?1.7 a ? 0.215 0.260 forward transconductance (note 3) g fs v ds = ?10 v, i d = ?2.2 a ? 5.0 ? s diode forward voltage (note 3) v sd i s = ?2.2 a, v gs = 0 v ? ?0.8 ?1.2 v dynamic (note 4) total gate charge q g ? 3.7 7.4 nc gate?source charge q gs v ds = ?10 v, v gs = ?4.5 v, i d = ?2.2 a ? 0.8 ? gate?drain charge q gd i d = ? 2 . 2 a ? 1.3 ? turn?on delay time t d(on) ? 13 20 ns rise time t r v dd = ?10 v, r l = 10 i d 10a v gen = 45v ? 35 55 turn?off delay time t d(off) i d ?1.0 a, v gen = ?4.5 v, r g = 6 ? 25 40 fall time t f g ? 25 40 source?drain reverse recovery time t rr i f = ?2.2 a, di/dt = 100 a/ s ? 40 80 2. surface mounted on 1 x 1 fr4 board. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
NTHD5903 http://onsemi.com 3 typical electrical characteristics 3 v 125 c 0 10 5 8 6 6 3 2 ?v ds , drain?to?source voltage (volts) i d, drain current (amps) 4 2 0 1 figure 1. on?region characteristics 0 10 8 3 24 6 4 2 1 0 5 figure 2. transfer characteristics ?v gs , gate?to?source voltage (volts) 1 24 3 2 0 figure 3. on?resistance vs. gate?to?source voltage ?v gs , gate?to?source voltage (volts) r ds(on), drain?to?source resistance ( ) i d, drain current (amps) 1910 8 5 0.25 4 0.15 figure 4. on?resistance vs. drain current and gate voltage ?i d, drain current (amps) ?50 0 ?25 25 1.4 1.2 1 0.8 0.6 50 125 100 figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c v gs = 1.4 v 4 13 t c = ?55 c i d = ?2.2 a t j = 25 c 0.4 0.05 75 150 t j = 25 c i d = ?2.2 a v gs = ?4.5 v r ds(on), drain?to?source resistance (normalized) 4 25 c r ds(on), drain?to?source resistance ( ) 1.6 v gs = ?4.5 v v gs = ?3.6 v 1.8 v 2.2 v 05 7 6 23 04 8 1.0e?11 20 16 figure 6. drain?to?source leakage current vs. voltage ?v ds , drain?to?source voltage (volts) 12 v gs = 0 v i dss , leakage (a) t j = 150 c t j = 100 c 2.4 v 2.6 v 2.8 v 3.4 v 3.6 v v gs = 4 v ? 10 v 0.35 0.2 0.1 0.3 v gs = ?2.5 v 1.0e?10 1.0e?9 1.0e?8 1.0e?7 1.0e?6 t j = 25 c
NTHD5903 http://onsemi.com 4 typical electrical characteristics v ds = 0 v v gs = 0 v 8 4 ?12 12 600 300 200 100 0 20 gate?to?source or drain?to?source voltage (volts) figure 7. capacitance variation c, capacitance (pf) figure 8. gate?to?source and drain?to?source voltage vs. total charge ?v gs, gate?to?source voltage (v) t j = 25 c c oss c iss c rss 500 ?v ds, drain?to?source voltage (v) 10 1 10 1 100 r g , gate resistance (ohms) figure 9. resistive switching time variation vs. gate resistance t, time (ns) v dd = ?10 v i d = ?1.0 a v gs = ?4.5 v 100 ?8 0 400 t d(off) t d(on) t f t r v gs v ds ?4 16 0.8 0 1 0 1.2 ?v sd , source?to?drain voltage (volts) figure 10. diode forward voltage vs. current i s , source current (amps) v gs = 0 v t j = 25 c 5 1 0.6 0.4 0.2 2 3 4 0 1 2 3 4 5 01234 0 1 2 3 4 5 6 7 8 9 10 11 q g , total gate charge (nc) i d = ?2.2 a t j = 25 c q g q gd q gs 2 1 0.1 0.01 10 10 10 ?4 ?3 ?2 ?1 10 1 10 100 600 square wave pulse duration (sec) normalized effective transient thermal impedance duty cycle = 0.5 0.2 single pulse 0.1 0.05 0.02 1. duty cycle, d = 2. per unit base = r thja = 90 c/w 3. t jm ? t a = p dm z thja (t) 4. surface mounted t 1 t 2 p dm notes: t 1 t 2 figure 11. normalized thermal transient impedance, junction?to?ambient
NTHD5903 http://onsemi.com 5 figure 12. basic figure 13. style 2 0.457 0.018 2.032 0.08 0.635 0.025 0.66 0.026 0.254 0.010 mm inches scale 20:1 1.092 0.043 0.178 0.007 0.457 0.018 2.032 0.08 0.635 0.025 0.66 0.026 0.711 0.028 basic pad patterns the basic pad layout with dimensions is shown in figure 13. this is sufficient for low power dissipation mosfet applications, but power semiconductor performance requires a greater copper pad area, particularly for the drain leads. the minimum recommended pad pattern shown in figure 12 improves the thermal area of the drain connections (pins 5, 6, 7, 8) while remaining within the confines of the basic footprint. the drain copper area is 0.0019 sq. in. (or 1.22 sq. mm). this will assist the power dissipation path away from the device (through the copper leadframe) and into the board and exterior chassis (if applicable) for the single device. the addition of a further copper area and/or the addition of vias to other board layers will enhance the performance still further.
NTHD5903 http://onsemi.com 6 package dimensions chipfet case 1206a?03 issue e b s c d g l a 1234 8765 m j k 1 2 3 4 8 7 6 5 dim min max min max inches millimeters a 2.95 3.10 0.116 0.122 b 1.55 1.70 0.061 0.067 c 1.00 1.10 0.039 0.043 d 0.25 0.35 0.010 0.014 g 0.65 bsc 0.025 bsc j 0.10 0.20 0.004 0.008 k 0.28 0.42 0.011 0.017 l 0.55 bsc 0.022 bsc m 5 nom s 1.80 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. mold gate burrs shall not exceed 0.13 mm per side. 4. leadframe to molded body offset in horizontal and vertical shall not exceed 0.08 mm. 5. dimensions a and b exclusive of mold gate burrs. 6. no mold flash allowed on the top and bottom lead surface. 7. 1206a-01 and 1206a-02 obsolete. new standard is 1206a-03. 0.05 (0.002) 5 nom 2.00 0.072 0.080 style 2: pin 1. source 1 2. gate 1 3. source 2 4. gate 2 5. drain 2 6. drain 2 7. drain 1 8. drain 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTHD5903/d chipfet is a trademark of vishay siliconix. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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